Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine

摘要

The deposition of boron nitride nanomaterials and ultrathin films in high vacuum conditions (1 X 10~(-6) - 1 X 10~(-3) Torr) using molecular borazine as well as pre-dissociated borazine has been investigated with the motivation of studying the nucleation efficiency of BN under high vacuum conditions. Molecular borazine displays negligible sticking probability on Si(111) 7 X 7 at room temperature. Pre-adsorbing the borazine on silicon at 140 K and subsequent annealing is effective in forming ultrathin hexagonal films on the sample. It is possible to nucleate BN nanomaterials on nickel-sputtered silicon with high efficiency if the borazine is first discharged in a radio-frequency plasma to form reactive radicals. High quality crystalline h-BN thin films, as well as BN nanotubes can be formed on nickel via this approach.