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A study on the bonding structure and mechanical properties of magnetron sputtered CN_x thin films

机译:磁控溅射CN_x薄膜的结合结构和力学性能的研究

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摘要

Carbon nitride (CN_x) films have been deposited by reactive (RF) magnetron sputtering, in order to investigate the effect of the energetic ion bombardment during deposition (IBD), in terms of applied V_b, on their bonding structure. Fourier Transform IR Ellipsometry (FTIRE) and X-ray photoelectron spectroscopy (XPS) were used for the investigation of the films bonding structure, while their mechanical properties were evaluated by nanoindentation measurements. At films grown with low negative V_b, (low energy IBD) the N atoms are distributed homogeneously in substitutional sites in graphitic rings through both sp~2 and sp~3 bonds and in linear chains, through sp~2 bonds. In contrast, the high negative V_b (high energy IBD) has been suggested to promote the non-homogeneous N distribution at localized regions in the films where the formation of sp~3 C-N bonds is favored. This behavior was also evidenced by the Cls and Nls XPS peak components, assigned to the sp~3 and sp~2 carbon-nitrogen bonds. Also, high energy IBD films revealed increased values of hardness and elasticity, while hardness values up to 45 GPa were measured at localized regions.
机译:氮化碳(CN_x)膜已通过反应(RF)磁控溅射沉积,以研究沉积过程中高能离子轰击(IBD)的作用,即所施加的V_b对它们的键合结构的影响。傅里叶变换红外椭偏仪(FTIRE)和X射线光电子能谱仪(XPS)用于研究薄膜的键合结构,同时通过纳米压痕测量评估其机械性能。在具有低负V_b(低能量IBD)的薄膜上,N原子通过sp〜2和sp〜3键均匀分布在石墨环的取代位点中,并通过sp〜2键均匀分布在线性链中。相反,已提出高负V_b(高能IBD)促进在膜中局部区域的非均匀N分布,其中膜倾向于形成sp〜3 C-N键。 Cls和Nls XPS峰组分也被证明是这种行为,这些组分被分配给sp〜3和sp〜2碳氮键。同样,高能IBD膜显示出增加的硬度和弹性值,而在局部区域测得的硬度值高达45 GPa。

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