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High termination efficiency using polyimide trench for high voltage diamond Schottky diode

机译:使用聚酰亚胺沟槽的高压金刚石肖特基二极管具有很高的端接效率

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摘要

Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97%. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge. (C) 2015 Elsevier B.V. All rights reserved.
机译:本文使用Sentaurus TCAD(技术计算机辅助设计)软件进行有限元模拟,研究了从简单经典的肖特基二极管端接到新型拓扑端接的过程。已经使用了场板端接下的聚酰亚胺沟槽。对于具有最佳参数的简单现场板,效率从67%提高到97%。还已经评估了端接电介质中的最大电场。为了提取两个方向上的最佳参数,对端接几何形状进行了广泛的研究。第一个是在击穿电压方面获得高效率,第二个是在终端边缘具有最小的电场峰值。 (C)2015 Elsevier B.V.保留所有权利。

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