首页> 外文期刊>Diamond and Related Materials >Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray
【24h】

Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray

机译:化学气相沉积金刚石膜的电性能和对X射线的电响应

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this paper, dark current-voltage (I-V) characteristics, current-temperature (I-T) characteristics, and photocurrents under steady-state X-ray excitation of CVI) diamond films were investigated. Results indicated that dark currents and photocurrents by X-ray irradiation for the (001) textured CVD diamond film were greater than those for the non-textured one. The differences in dark currents and resistivities were attributed to a large number of grain boundaries contained in the non-textured diamond films. From the I-T curves, at the temperature higher than 500 K, currents clearly followed an exponential behavior because of the activation energy of E_a = 1.68 eV which was normally attributed to Si trapped to a vacancy in the diamond lattice.
机译:本文研究了CVI金刚石薄膜在稳态X射线激发下的暗电流-电压(I-V)特性,电流-温度(I-T)特性和光电流。结果表明,(001)织构的CVD金刚石膜的X射线辐射暗电流和光电流大于未织构的CVD金刚石膜的暗电流和光电流。暗电流和电阻率的差异归因于非纹理金刚石膜中包含的大量晶界。根据I-T曲线,在高于500 K的温度下,电流明显遵循指数行为,这是因为E_a = 1.68 eV的活化能通常归因于困在金刚石晶格中的空位所致的Si。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号