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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Development of sputtered Shape Memory Alloy (SMA) Ni-Ti films for actuation in ice cooled environments
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Development of sputtered Shape Memory Alloy (SMA) Ni-Ti films for actuation in ice cooled environments

机译:溅射形状记忆合金(SMA)Ni-Ti膜的开发,用于在冰冷却的环境中进行驱动

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Due to the high sensitivity of Ni-Ti films to environmental changes, e.g. thermal, and/or to stress, they are ideal materials for applications on micro-sensors. It was aimed to obtain Ni-Ti films exhibiting the beginning of the B2 double left right arrow R-phase transformation between room temperature (RT) and 0 degrees C. Thus, films with a slightly Ni-rich composition were prepared by Sputtering, without intentional heating of the Substrate. The Ni-Ti films were deposited on an Si3N4 intermediate layer previously deposited oil naturally oxidized Si(100). The crystallization behaviour of the samples (at a constant temperature of 430 degrees C) was studied by X-ray diffraction in grazing incidence geometry off-plane (GIXD) at a synchrotron-radiation beamline. The GIXD patterns obtained during the annealing process of the Ni-Ti polycrystalline films revealed mainly an austenitic structure (B2 phase) and the precipitation of Ni4Ti3. The results have also shown that the presence of an intermediate layer of Si3N4 enhances the crystallization process of the Ni-Ti sputtered films when compared to the films deposited directly oil single-crystal Si (with native oxide). The phase transformation behaviour of the Ni-Ti film on Si3N4 was evaluated by XRD in off-plane Bragg-Brentano geometry during cooling (RT -> -40 degrees C) and heating (-40 degrees C -> RT). It has been observed that a high fraction of the Ni-Ti film is already transformed to R-phase at 9 degrees C (austenitic at RT), as well as a very small temperature hysteresis for the B2 double left right arrow R-phase transformation. After the characterization described above, the film was removed from the substrate. The free-standing film showed a pronounced "two-way" shape memory effect (SME). In the austenitic state tile film presents a flat shape. During cooling, by reducing its distance from ice cubes (i.e., decreasing the surrounding temperature), the film starts bending exhibiting a final curled shape (yet Without touching tile ice). On heating it recovers its flat shape. The authors attribute tile nature of this "two-way" SME to the Ni4Ti3 precipitates that formed during the heat treatment.
机译:由于Ni-Ti膜对环境变化的敏感性高,例如对于热和/或应力而言,它们是微传感器应用的理想材料。目的是获得在室温(RT)和0摄氏度之间呈现出B2双左向右箭头R相转变开始的Ni-Ti膜。因此,通过溅射制备了具有少量富Ni组成的膜,基板的故意加热。 Ni-Ti膜沉积在预先沉积的油自然氧化的Si(100)的Si3N4中间层上。通过X射线衍射研究了在同步辐射辐射束线下掠入射几何面外(GIXD)中样品的结晶行为(在430摄氏度的恒定温度下)。在Ni-Ti多晶膜的退火过程中获得的GIXD图主要显示出奥氏体结构(B2相)和Ni4Ti3的析出。结果还表明,与直接沉积油单晶硅(具有天然氧化物)的膜相比,Si3N4中间层的存在增强了Ni-Ti溅射膜的结晶过程。在冷却(RT-> -40°C)和加热(-40°C-> RT)期间,通过XRD在平面外Bragg-Brentano几何形状中评估了Si3N4上Ni-Ti膜的相变行为。已经观察到,大部分的Ni-Ti膜已经在9摄氏度(RT下为奥氏体)转变为R相,并且B2双向左向右箭头R相转变的温度滞后很小。 。经过上述表征后,从基底上除去膜。该独立式膜显示出明显的“双向”形状记忆效应(SME)。在奥氏体状态下,瓷砖薄膜呈现出平坦的形状。在冷却过程中,通过减小其与冰块的距离(即降低周围温度),薄膜开始弯曲,呈现出最终的卷曲形状(但仍未接触瓷砖冰)。加热后恢复其扁平形状。作者将这种“双向” SME的性质归因于热处理过程中形成的Ni4Ti3沉淀。

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