Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors

Wilczynska T; Wisniewski R; Wieteska K; Slowinski B

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Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors

机译：深度注入Kr离子对压力锰传感器的电阻率的影响

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The influence of deep Kr ions' implantation on the manganin alloy resistivity has been investigated. A remarkable increase in resistivity of irradiated manganin samples, about 17%, has been observed. As a consequence, the pressure coefficient of manganin has changed by about 3%. (c) 2005 Elsevier Ltd. All rights reserved.

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《Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology 》 |2005年第4期| 共4页
作者
Wilczynska T; Wisniewski R; Wieteska K; Slowinski B;
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正文语种 eng
中图分类真空技术的应用 ;
关键词
manganin; deep ion implantation; resistivity measurements; pressure sensor;

机译：锰;深离子注入;电阻率测量;压力传感器;

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1. Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors [J] . Wilczynska T, Wisniewski R, Wieteska K, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2005 ,第2a4期

机译：深度注入Kr离子对压力锰传感器的电阻率的影响
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3. The influence of krypton and bismuth-krypton implantation on manganin sensitivity to temperature and hydrostatic pressure [J] . R. WISNIEWSKI, A. CZACHOR, T. WILCZYNSKA, High Pressure Research . 2007 ,第1期

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Influence of deep-implanted Kr ions on resistivity of pressure manganin sensors

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