首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Langmuir probe measurements of plasma parameters in a planar magnetron with additional plasma confinement
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Langmuir probe measurements of plasma parameters in a planar magnetron with additional plasma confinement

机译:Langmuir探针在具有附加等离子体约束的情况下测量平面磁控管中的等离子体参数

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摘要

Langmuir probe measurements have been carried out in a planar magnetron sputtering system with an additional plasma confinement which can be operated at low argon pressures (down to 3.4×10{sup}(-2) Pa) when target utilization greater than 80% can be achieved. The electron density, electron temperature, 'relative densities of low- and high-energy groups of electrons and the difference between the plasma and floating potential have been determined in various positions between the target and asubstrate at the argon pressures in the range from 0.05 to 5 Pa. It has been proved that the additional magnetic field results, particularly in larger distances from the target at lower pressures, in the formation of structured electron energydistributions with a substantial contribution from a high-energy group of electrons, which is responsible for enhanced gas ionization and relatively high values observed for the difference between the plasma and the floating potential.
机译:Langmuir探针测量是在带有附加等离子体限制的平面磁控溅射系统中进行的,当目标利用率大于80%时,可以在低氩压(低至3.4×10 {sup}(-2)Pa)下操作实现。在氩气压力为0.05至0.05的范围内,已确定了靶材和基板之间各个位置的电子密度,电子温度,低,高能电子的相对密度以及等离子体和浮动电位之间的差异。已证明5 Pa。额外的磁场导致形成结构化的电子能量分布,尤其是在较低压力下距目标较大的距离,其中高能电子基团起了很大的作用,这有助于增强气体电离和相对较高的值,可观察到等离子体和浮动电势之间的差异。

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