首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Electrical and optical characterizations by prism-coupling method of PZT deposited in-situ by sputtering
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Electrical and optical characterizations by prism-coupling method of PZT deposited in-situ by sputtering

机译:通过棱镜耦合法对通过溅射原位沉积的PZT进行电学和光学表征

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Thin films of lead titano-zirconate (PZT) were prepared in-situ using radio-frequency sputter-deposition. Then in-situ perovskite formation is very sensitive to the substrate temperature (T-s) and the sputtered lead flux; the incident lead flux is controlled by the lead content in the target (X). Perovskite phase can be obtained under a relatively wide range of (X, T-s) combinations. The lower growth temperature is 510degreesC associated to X = 1.10 and the optimized growth temperature, in terms of optical and electric properties, is T-s = 550degrees (X = 1.50). At this temperature, the relative dielectric constant is equal to 860 and the dielectric losses are in the order of 0.019. The remnant polarization and the coercive field are, respectively, 19 muC/cm(2) and 42 kV/cm. The piezoelectric coefficient e(31) is maximum without poling treatment; it is in the order of -5.2 C/m(2). The prism coupling method is used to characterize the optical properties of the films. Both ordinary (n(0)) and extraordinary (n(e)) refractive indices were determined from transverse electric and transverse magnetic mode excitations; n(0) = 2.558 and n(e) = 2.507 at 632.8 nm. Furthermore, the refractive index profile analysis reveals a step-like behavior of PZT films, synonymous of a good optical homogeneity along the layer thickness. (C) 2002 Elsevier Science Ltd. All rights reserved. [References: 18]
机译:使用射频溅射沉积法原位制备钛锆钛酸铅(PZT)薄膜。然后原位钙钛矿的形成对衬底温度(T-s)和溅射的铅通量非常敏感。入射铅通量由靶材(X)中的铅含量控制。钙钛矿相可以在相对宽范围的(X,T-s)组合下获得。较低的生长温度为510摄氏度(与X = 1.10关联),最佳的生长温度在光学和电学性质方面为T-s = 550摄氏度(X = 1.50)。在此温度下,相对介电常数等于860,介电损耗约为0.019。剩余极化和矫顽场分别为19μC/ cm(2)和42 kV / cm。压电系数e(31)在没有极化处理的情况下最大;它的顺序为-5.2 C / m(2)。棱镜耦合法用于表征薄膜的光学性能。普通(n(0))和非常规(n(e))折射率均由横向电和横向磁模激发确定;在632.8 nm处n(0)= 2.558和n(e)= 2.507。此外,折射率分布分析揭示了PZT薄膜的阶梯状行为,是沿层厚度的良好光学均匀性的同义词。 (C)2002 Elsevier ScienceLtd。保留所有权利。 [参考:18]

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