Synthesis and properties of epitaxial SnO _2 films deposited on MgO (100) by MOCVD (Conference Paper)

摘要

Epitaxial tin oxide (SnO _2) thin films have been prepared on MgO (100) substrates at 500-600 °C by metalorganic chemical vapor deposition method. Structural and optical properties of the films have been investigated in detail. The obtained films were pure SnO _2 with the tetragonal rutile structure. An in-plane orientation relationship of SnO _2 (110) [010]//MgO (200) [110] between the film and substrate was determined. Two variant structure of SnO _2 were analyzed. The structure of the film deposited at 600 °C was investigated by high-resolution transmission electron microscopy, and an epitaxial structure was observed. The absolute average transmittance of the SnO _2 film at 600 °C in the visible range exceeded 90%. The optical band gap of the film was about 3.93 eV.