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首页> 外文期刊>High Temperature Material Processes >POSSIBILITY OF COMPOSITE SILICON NITRIDE + SILICON CARBIDE (Si_(3)N_(4-)SiC) POWDER PRODUCTION IN THERMAL PLASMA
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POSSIBILITY OF COMPOSITE SILICON NITRIDE + SILICON CARBIDE (Si_(3)N_(4-)SiC) POWDER PRODUCTION IN THERMAL PLASMA

机译:等离子体中合成氮化硅+碳化硅(Si_(3)N_(4-)SiC)粉末的可能性

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摘要

The results of equilibrium composition computation and total (including heat of formation) enthalpy calculation, in the temperature range of 1000 to 6000 and at pressure of 1 bar, for the Si-C-H-N system are presented in the paper. These data enable the determination and optimization of mass, temperature and energy parameters of the powder production process of composite silicone nitride + silicone carbide (Si_(3)N_(4-)SiC) by silicon powder evaporation in nitrogen plasma, followed by reactive quenching with cold methane. The way of using the system enthalpy, temperature interdependence for the prediction of temperature mass and energy parameters of the process, has been illustrated on the presented example.
机译:本文介绍了Si-C-H-N系统在1000至6000温度范围内和1 bar压力下的平衡组成计算和总(包括形成热)焓的计算结果。这些数据使得能够通过在氮等离子体中蒸发硅粉,然后进行反应淬火,确定和优化复合氮化硅+碳化硅(Si_(3)N_(4-)SiC)粉末生产过程的质量,温度和能量参数。用冷甲烷。在给出的例子中已经说明了使用系统焓,温度相互依赖性来预测过程的温度质量和能量参数的方式。

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