Parameter-Dependent Third-Order Susceptibility of In Ga_(1-x) N/GaN Parabolic Quantum Dots

摘要

The electron states confined in wurtzite In^Gai.jN/GaN strained quantum dots (QDs) have been investigated in the effective -mass approximation by solving the Schrodinger equation, in which parabolic confined potential and strong built-in electric field effect (due to the piezoelectricity and spontaneous polarization) have been taken into account. The real part Re x~(3)(0,0,) of the third-order susceptibility describe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore, the study shows increase under resonant conditions with the QDs' radius and height increase, and the same results occur when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase.