Characterization of the resonant third-order nonlinear susceptibility of Si-doped GaN-AlN quantum wells and quantum dots at 1.5 μm

摘要

We report on the third-order optical nonlinearity of the e1 -e2 intersubband transition in GaN-AlN quantum wells and the s-pz intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 μm. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications. © 2008 IEEE.