Light-induced domain inversion in Mg-doped near stoichiometric lithium niobate crystals

摘要

We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and End that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.