...
首页> 外文期刊>Chinese physics letters >Structures and properties of Zr-N films prepared by ECR-microwave plasma source enhanced direct-current magnetron sputtering under different N-2 partial pressures
【24h】

Structures and properties of Zr-N films prepared by ECR-microwave plasma source enhanced direct-current magnetron sputtering under different N-2 partial pressures

机译:不同N-2分压下ECR-微波等离子体源增强直流磁控溅射制备Zr-N膜的结构和性能

获取原文
获取原文并翻译 | 示例
           

摘要

ZrN thin films were prepared on 45# steel by using ECR-microwave plasma source enhanced de magnetron sputtering. The increase of the N-2 partial pressure P-N2 leads to phase transitions from ZrN and an orthorhombic ZrN, phase to an amorphous phase. At P-N2 = 1.1 X 10(-2) Pa to 4.5 x 10(-2) Pa, the films contain both ZrN and ZrN. (a = 0.3585, b = 0.4443, c = 0.5798 nm). At P-N2 = 5.0 X 10(-2) Pa, the film shows a strong tendency towards the amorphous phase. The N concentration at different P-N2 varies from 7.73 to 66.96% according to electron probe analysis. The microhardness of the samples, varying from 19.82 GPa to 26.73 GPa, first increases and then decreases with increasing P-N2. The hardest sample has a wear rate of about 4.5 X 10(-5) mg/min. The property changes are relative to the film structure due to different N-2 partial pressures.
机译:通过使用ECR-微波等离子体源增强的磁控溅射在45#钢上制备ZrN薄膜。 N-2分压P-N2的增加导致ZrN和正交ZrN相转变为非晶相。当P-N2 = 1.1 X 10(-2)Pa至4.5 x 10(-2)Pa时,薄膜同时含有ZrN和ZrN。 (a = 0.3585,b = 0.4443,c = 0.5798nm)。在P-N2 = 5.0 X 10(-2)Pa时,薄膜表现出很强的向非晶相的趋势。根据电子探针分析,不同P-N2下的N浓度在7.73至66.96%之间变化。样品的显微硬度从19.82 GPa到26.73 GPa不等,随P-N2的增加先增加后减少。最硬的样品的磨损速率约为4.5 X 10(-5)mg / min。由于不同的N-2分压,性能变化与薄膜结构有关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号