Defect-related photoresponse and polarization-sensitive photodetection of single ZnO nanowires

摘要

Defect-related photoconductivity of single ZnO nanowires is investigated. The photoconductivity shows power-law dependence with incident green laser intensity due to the defect mechanisms including both recombination centres and traps. The device based on single ZnO nanowire shows a sensitive photoresponse to green light with significant on/off ratios. In addition, the photocurrent is highly sensitive to the polarization of the incident illumination. Therefore, the nanowire may act as a polarized photodetector.