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Nanowear behaviour of monocrystalline silicon against SiO_2 tip in water

机译:单晶硅对水中SiO_2尖端的纳米磨损行为

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By using an atomic force microscopy, the wear tests of Si(100) surface against SiO_2 microsphere were performed both in water and in air. During the tests, the contact pressure was varied between 0.78 GPa and 1.1 GPa, the displacement amplitude was set as 250 nm and the number of wear cycles was 200. As a comparison, the wear tests of Si(100) surface against diamond tip were also performed in water and air. The experimental results indicated that water environment played an important role in the wear behaviour of Si/SiO_2 pair. Under a contact pressure of 1.1 GPa, the wear depth of silicon in water was about 0.25 nm, which was less than 10% of that in air. Since the wear depths of silicon in water were similar at various sliding velocities (0.04-5 μm/s), the hydrodynamic lubrication was not the main reason causing the slight wear of silicon in water. Further analysis indicated that the distinct wear behaviour of Si/SiO_2 pair in air and in water could be mainly explained as the different intensity of chemical reactions in two environments for the pair of Si/SiO_2. In air, the Si-O-Si bridges could easily form between SiO_2 microsphere and silicon substrate and induced serious tribochemical wear of silicon. When the Si/SiO_2 pair was immersed in water, because of the different structure of the adsorbed water layer on silicon surface and the effect of the electrical double layer, the tribochemical reaction was largely resisted and the wear of silicon was slight. Even though, since the contact pressure was too low to induce the mechanical wear of silicon, the limited wear of silicon in water was still attributed to the tribochemical reaction. The results may help us understand the nanowear mechanism of silicon and optimize the tribological design of dynamic MEMS working in water environment.
机译:通过使用原子力显微镜,在水中和空气中都进行了Si(100)表面对SiO_2微球的磨损测试。在测试过程中,接触压力在0.78 GPa和1.1 GPa之间变化,位移幅度设置为250 nm,磨损循环数为200。作为比较,Si(100)表面对金刚石尖端的磨损测试为还可以在水和空气中表演。实验结果表明,水环境在Si / SiO_2对的磨损行为中起着重要作用。在1.1 GPa的接触压力下,硅在水中的磨损深度约为0.25 nm,不到空气中的磨损深度的10%。由于在各种滑动速度(0.04-5μm/ s)下,水中硅的磨损深度相似,因此流体动力润滑不是导致水中硅轻微磨损的主要原因。进一步的分析表明,Si / SiO_2对在空气和水中的明显磨损行为可以主要解释为两种环境中该对Si / SiO_2的化学反应强度不同。在空气中,Si-O-Si桥很容易在SiO_2微球和硅衬底之间形成,并引起严重的硅摩擦化学磨损。当将Si / SiO_2对浸入水中时,由于硅表面吸附水层的结构不同以及双电层的作用,摩擦化学反应受到很大的抵抗,硅的磨损很小。即使由于接触压力太低而不能引起硅的机械磨损,水中硅的有限磨损仍然归因于摩擦化学反应。结果可能有助于我们了解硅的纳米磨损机理,并优化在水环境中工作的动态MEMS的摩擦学设计。

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