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Advancement in Nanoscale CMOS Device Design En Route to Ultra-Low-Power Applications

机译:纳米级CMOS器件设计的进步正在推动超低功耗应用

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摘要

In recent years, the demand for power sensitive designs has grown significantly due to the fast growth of battery-operated portable applications. As the technology scaling continues unabated, subthreshold device design has gained a lot of attention due to the low-power and ultra-low-power consumption in various applications. Design of low-power high-performance submicron and deep submicron CMOS devices and circuits is a big challenge. Short-channel effect is a major challenge for scaling the gate length down and below 0.1μm. Detailed review and potential solutions for prolonging CMOS as the leading information technology proposed by various researchers in the past two decades are presented in this paper. This paper attempts to categorize the challenges and solutions for low-power and low-voltage application and thus provides a roadmap for device designers working in the submicron and deep submicron region of CMOS devices separately.
机译:近年来,由于电池供电的便携式应用的快速增长,对功率敏感型设计的需求已大大增加。随着技术扩展的步伐不减,由于各种应用中的低功耗和超低功耗,阈值以下器件的设计引起了很多关注。低功耗高性能亚微米和深亚微米CMOS器件和电路的设计是一个巨大的挑战。短沟道效应是将栅极长度缩小至0.1μm以下的主要挑战。本文介绍了过去二十年来由不同研究人员提出的延长CMOS作为领先信息技术的详细评论和潜在解决方案。本文试图对低功耗和低压应用的挑战和解决方案进行分类,从而为分别在CMOS器件的亚微米和深亚微米区域工作的器件设计人员提供了路线图。

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