首页> 外文期刊>Carbon: An International Journal Sponsored by the American Carbon Society >Analysis of the strong propensity for the delocalized diamagnetic n electronic structure of hydrogenated graphenes
【24h】

Analysis of the strong propensity for the delocalized diamagnetic n electronic structure of hydrogenated graphenes

机译:氢化石墨烯离域反磁性n电子结构的强势分析

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The conformation and electronic structure of hydrogen-treated graphenes are investigated using the density-functional theory (DFT) method. We show that the overall energetics of the hydrogen chemisorption configuration can be analyzed with two energy components: the electronic pairing effect in the hyper-conjugated π electron network and the strain effect in the C-C bond at the boundary between sp~3- and sp~2-bonded regions. Some unpaired hydro-genation configurations can show magnetic ground states, but these were found to be unstable. The least strained paired configurations strongly favored the delocalized % electronic states. This suggests that appropriate annealing following a hydrogen plasma treatment of graphene can lead to a semiconducting state with a stable finite bandgap.
机译:使用密度泛函理论(DFT)方法研究了氢处理石墨烯的构象和电子结构。我们表明可以用两个能量分量来分析氢化学吸附构型的整体能量学:超共轭π电子网络中的电子配对效应和sp〜3-和sp〜之间边界处CC键的应变效应。 2键合区域。一些未配对的加氢配置可以显示磁性基态,但是发现它们不稳定。应变最小的配对构型强烈支持离域的电子态。这表明在对石墨烯进行氢等离子体处理之后进行适当的退火可以导致具有稳定的有限带隙的半导体状态。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号