Application of soft x-ray emission spectroscopy for the study of solid-phase reactions in Si-based interfaces

摘要

The possibilities of soft x-ray emission spectroscopy with variation of electron excitation energy for the study of solid phase reactions in thin films were analysed. It was shown that Si L-2,L-3 emission spectra of high-photon-energy resolution are sensitive to changes in chemical states of materials, and the variation of the electron excitation energy allows to analyse depth profiles. Si L-2,L-3 spectra were used for the phase analysis of the Hf/(001)Si, Ir/(111)Si, (Fe + Co)/(001)Si thin films subjected to annealing and SiO2/p-Si and SiO2-Si films irradiated with high-energy electrons. The results are compared with data obtained by means of Rutherford backscattering, electron probe microanalysis and optical ellipsometry. Copyright (C) 2002 John Wiley Sons, Ltd. [References: 38]