TEMPERATURE DISTRIBUTION IN SILICON-ALUMINUM THIN FILMS WITH PRESENCE OF THERMAL BOUNDARY RESISTANCE

摘要

Phonon transport in two-layer films, consisting of silicon and aluminum, is considered. Phonon radiative energy transfer is incorporated to predict equilibrium temperature distribution in the silicon film, while the modified two-equation model is used to predict electron and phonon temperatures in the aluminum film. The thermal boundary resistance is introduced at the interface of both films. Equilibrium temperature decay is found to be sharp in the early heating period in the silicon film. Phonon temperature remains higher than electron temperature in the vicinity of the interface of aluminum film. Electron and phonon temperature become the same at mid-thickness of the aluminum film.