Investigations on the possibilities of a MISiCFET sensor system for OBD and combustion control utilizing different catalytic gate materials

摘要

Different catalytic materials,like Pt and Ir,applied as gate contacts on metal insulator silicon carbide field effect transistors - MISiCFET-facilitate the manufacture of gas sensor devices with differences in selectivity,devices which due to the chemical stability and wide band gap of SiC are suitable for high temperature applications.The combination of such devices in a sensor system,utilizing multivariate analysis/modeling,have been tested and some promising results in respect of monitoring a few typical exhaust and flue gas constituents,in the future aiming at on board diagnostics (OBD) and combustion control,have been obtained.