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首页> 外文期刊>Transactions of the Magnetics Society of Japan >Recording Tiny Marks on a Magneto-Optical Medium with Micro-Columnar Structure
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Recording Tiny Marks on a Magneto-Optical Medium with Micro-Columnar Structure

机译:在具有微柱状结构的磁光介质上记录微小标记

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The MsHc value of TbFeCo magneto-optical (MO) film has been identified as a key factor in high-density recording. A particular micro structure formed in the magneto-optical memory layer due to the magnetic underlayer was found to be effective for increasing the MsHc value in 160 nm thick TbFeCo recording film. However, a thinner memory layer is required for high performance of productivity. This paper describes the relationship between magnetic properties and the micro-columnar structure, which depends on the thickness of the TbFeCo recording film and its layer structure. It has been found that a thickness of more than 100 nm in the memory layer produced by sputtering from an alloy target is needed for the DWDD method. And there is some difficulty in recording a tiny mark on the 50 nm thick memory layer in a multi-layer MO medium. However, the static magnetic properties of the memory layer are not altered by differences in thickness. As much as 1.8 x 10 erg/cm Ku can be obtained by sputtering a thickness of less than 80 nmfrom an alloy target, and it is possible to perform ultra-high density recording in an 80 nm thick memory layer with a mark length of less than 50 nm These results suggest that control of the exchange coupling boundary between the layers in a multi-layer MO mediummakes it possible to record stable tiny marks.
机译:TbFeCo磁光(MO)膜的MsHc值已被确定为高密度记录的关键因素。发现由于磁性底层而在磁光存储层中形成的特定微结构对于增加160nm厚的TbFeCo记录膜中的MsHc值是有效的。然而,为了实现高性能的生产,需要更薄的存储层。本文介绍了磁性能与微柱状结构之间的关系,该关系取决于TbFeCo记录膜的厚度及其层结构。已经发现,对于DWDD方法,在由合金靶溅射形成的存储层中需要大于100nm的厚度。在多层MO介质中,在50 nm厚的存储层上记录微小的标记有些困难。然而,存储层的静磁性能不会由于厚度的差异而改变。通过从合金靶溅射小于80nm的厚度可以获得高达1.8×10 erg / cm Ku,并且可以在标记长度小于80nm的存储层中执行超高密度记录。大于50nm这些结果表明,通过控制多层MO介质中各层之间的交换耦合边界,可以记录稳定的微小标记。

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