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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam-assisted deposition (IBAD)
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Thickness dependence of the structural, mechanical and electrical properties of Ni films deposited on polyimide by ion beam-assisted deposition (IBAD)

机译:通过离子束辅助沉积(IBAD)沉积在聚酰亚胺上的Ni膜的结构,机械和电性能的厚度依赖性

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摘要

Ni thin films with different thicknesses were deposited on pre-treated polyimide substrates by ion beam-assisted deposition. Dependence of structural, mechanical and electrical properties of the Ni films on their thickness was investigated. The results showed a clear correlation between film properties and film thickness. The inter-diffusion at the interface regions of the films with different deposition time were demonstrated by transmission electron microscopy and X-ray photoelectron spectroscopy. With increasing film thickness, surface roughness of the Ni films firstly decreased and then increased, while the grain size gradually increased. Residual stress of the Ni thin films decreased with increasing Ni film thickness up to 202 nm and then slightly increased as the film thickness further increased. Resistivity decreased, and temperature coefficient of resistivity (TCR) increased with increasing film thickness due to the enhancement of crystallization degree and the increase in grain size. The decrease in surface roughness and residual stress also contributed to the decrease of resistivity and the increase of TCR of the films. An optimal film thickness is suggested, which yielded a relatively high TCR value and low levels of both surface roughness and residual stress.
机译:通过离子束辅助沉积将具有不同厚度的Ni薄膜沉积在预处理的聚酰亚胺基板上。研究了镍膜的结构,机械和电学性质对其厚度的依赖性。结果表明膜性质和膜厚度之间有明显的相关性。通过透射电子显微镜和X射线光电子能谱证明了具有不同沉积时间的薄膜界面区域的相互扩散。随着膜厚的增加,Ni膜的表面粗糙度先减小然后增大,而晶粒尺寸逐渐增大。 Ni薄膜的残余应力随着Ni膜厚度的增加而增加,直至202nm,然后随着膜厚度的进一步增加而略有增加。由于结晶度的提高和晶粒尺寸的增加,电阻率降低,并且电阻率温度系数(TCR)随着膜厚度的增加而增加。表面粗糙度和残余应力的降低也有助于电阻率的降低和薄膜TCR的增加。建议最佳的膜厚度,这会产生相对较高的TCR值以及较低的表面粗糙度和残余应力。

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