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Auger parameter studies of third-row chemical elements

机译:第三行化学元素的俄歇参数研究

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摘要

The Auger parameter (AP) studies available in the literature are usually based on Auger transitions involving only core-level electrons. In this paper, besides the usual AP -alpha*(z) = [BE(2p)] + [KE(KL23L23)], (Z = third-row chemical elements) - we also considered the AP involving core - valence - valence Auger transitions -gamma*(z) = [BE(2p)] + [KE(L23VV)]. The chemical shifts for gamma* between Al-0 and Al2O3 and between Si-0 and SiO2 are more than twice that for alpha* whereas the difference in such chemical shifts progressively decreases with increasing Z. While the inelastic mean free path (lambda) associated with a* spans the range similar to 2.5-4.5 nm, gamma* relates to a much more surface-specific analysis, i.e. 0.5 < lambda < 2.5 nm. We discuss the diagnostic potential of gamma* and outline its advantages and shortcomings in the surface and interface analysis of materials. Copyright (C) 2006 John Wiley & Sons, Ltd.
机译:文献中可用的俄歇参数(AP)研究通常基于仅涉及核能级电子的俄歇跃迁。在本文中,除了通常的AP -alpha *(z)= [BE(2p)] + [KE(KL23L23)],(Z =第三行化学元素)外,我们还考虑了涉及核心-价-价的AP俄歇变换-gamma *(z)= [BE(2p)] + [KE(L23VV)]。在Al-0和Al2O3之间以及在Si-0和SiO2之间,γ*的化学位移是α*的两倍以上,而这种化学位移的差异随着Z的增加而逐渐减小。当a *的范围类似于2.5-4.5 nm时,gamma *涉及更多的表面特异性分析,即0.5 <λ<2.5 nm。我们讨论了gamma *的诊断潜力,并概述了其在材料的表面和界面分析中的优缺点。版权所有(C)2006 John Wiley&Sons,Ltd.

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