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Corrosion properties of thin molybdenum silicide films

机译:硅化钼薄膜的腐蚀性能

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The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al2O3). The compositions studied were Mo, MoSi0.58, MoSi1.04, MoSi1.4 and MoSi1.9-2.1. Characterisation of the samples was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy(XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of Mo3Si was found in the molybdenum-rich samples (MoSi0.58) containing the two phases Mo,Si and Mo5Si3. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi1.9-2.1 films had the best corrosion properties of the films studied. This composition had three passivation peaks, at about 154, 305 and 1850 mV(SCE), respectively. In the silicon-rich samples, containing the phases MoSi2 and Mo5Si3, preferential corrosion of Mo5Si3 was found. All the samples containing the disilicide phase showed at least two passivation peaks. XPS and AES studies on the passive films formed on the samples at the two first passivation peaks indicate that both peaks are due to oxidation of silicon-and molybdenum-containing species. The amount of molybdenum in the outermost layer is increased after the second peak. (C) 1997 Elsevier Science S.A.
机译:通过电位动力学测量研究了溅射的钼和硅化钼薄膜在盐酸(HCl)中的腐蚀性能。通过将膜沉积在惰性氧化铝(Al2O3)上,避免了基材对腐蚀行为的影响。研究的成分是Mo,MoSi0.58,MoSi1.04,MoSi1.4和MoSi1.9-2.1。在腐蚀之前和之后,通过X射线衍射(XRD)和扫描电子显微镜(SEM)对样品进行表征。利用X射线光电子能谱(XPS)和俄歇电子能谱(AES)对偏光膜进行了分析。在包含Mo,Si和Mo5Si3两相的富钼样品(MoSi0.58)中发现Mo3Si的腐蚀。这些薄膜的极化曲线显示,相对于饱和甘汞电极(SCE),钝化峰为228 mV。 MoSi1.9-2.1薄膜具有所研究薄膜的最佳腐蚀性能。该组合物具有三个钝化峰,分别在约154、305和1850mV(SCE)。在包含相MoSi2和Mo5Si3的富硅样品中,发现Mo5Si3受到优先腐蚀。包含二硅化物相的所有样品均显示至少两个钝化峰。 XPS和AES研究了在样品的两个第一个钝化峰处形成的钝化膜,这两个峰均归因于含硅和含钼物质的氧化。在第二个峰值之后,最外层的钼含量增加。 (C)1997年Elsevier Science S.A.

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