Role of thermal stability and vapor pressure of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)magnesium(II) and its triamine adduct in producing magnesium oxide thin film using a plasma-assisted LICVD process

摘要

Thin films of magnesia were deposited on various substrates using plasma-assisted liquid injection chemical vapor deposition with volatile Mg(tmhd)(2)center dot 2H(2)O (1) (tmhd = 2.2,6,6-tetramethyl-3,5-heptanedione). The precursor complexes, Mg-2(tmhd)(4)center dot(2), and Mg(tmhd)(2)center dot pmdien (3) (pmdien; N,N,N ',N '',N ''-pentamethyl-diethylenetriamine) were prepared from Mg(tmhd)(2)center dot 2H(2)O (1). The temperature dependence equilibrium vapor pressure (P-e)(T) data yielded a straight line when log p(e) was plotted against reciprocal temperature in the range of 360-475 K, leading to standard enthalpy of vaporization (Delta H-vap degrees) values of 59 +/- 1 and 67 +/- 2 kJ mol(-1) for (2) and (3) respectively. Thin films of magnesium oxide were grown at 773 K using complex (1) on various substrate materials. These films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray for their composition and morphology.