High current metal-ion implantation to fabricate metal silicides

摘要

Using a metal vapor vacuum arc (MEVVA) ion source, metallic silicides, such as C54-TiSi{sub}2, NiSi{sub}2, COSi{sub}2, NbSi{sub}2 and TaSi{sub}2, etc., with good electrical properties were obtained directly on Si wafers by high current metal-ion implantation with neither in situ heating nor post-annealing. Semiconducting silicides, such as β-FeSi{sub}2 and CrSi{sub}2 were also directly formed on Si wafers by MEVVA' ion implantation with unique physical properties. The growth mechanism of the metal silicides is also discussed for Ni-Si as a representative system.