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Nucleation and growth of crystalline Indium Tin Oxide (ITO) coatings on polyethylene terephthalate (PET)

机译:聚对苯二甲酸乙二醇酯(PET)上的结晶铟锡氧化物(ITO)涂层的形核和生长

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摘要

We present the nucleation and growth mode of crystalline ITO (c-ITO) on polymeric substrates. Crystallinity is known to be one of the most important factors that determine the functional and structural properties of ITO coated as electrodes. We sputter-deposit ITO on polymeric substrates at low temperatures varying deposition conditions. The thermal energy supplied from a heated substrate during deposition or from thermal annealing is known to be as important as deposition parameters to make the growth of high quality c-ITO possible. However, raising temperatures of the polymeric substrates is quite limited due to low glass transition temperatures (T_g). The nucleation and growth patterns of c-ITO from amorphous ITO (a-ITO) are observed using high resolution transmission electron microscopy (HR TEM) and are compared with those on Si or glass substrates that were reported by others. The sheet resistance (R_s) of ITO is also measured and the relationship to the microstructures is investigated. Our results reveal that crystallites are nucleated on growing surfaces of a-ITO and grow with little interruption to be columnar grains in ITO on the polymeric substrates. This is different from the random nucleation and competitive growth mode of columnar grains from the interface with Si or glass substrates at similar deposition conditions. The lattice distortion in ITO due to mismatches in physical and chemical properties with the substrate is more severe on polymers than on Si or glasses, which seems to be one of the potential reasons that the ITO between the interface and columnar grains remains mostly amorphous.
机译:我们介绍了在聚合物基质上结晶ITO(c-ITO)的成核和生长模式。已知结晶度是决定作为电极涂覆的ITO的功能和结构特性的最重要因素之一。我们在低温下通过改变沉积条件在聚合物基板上溅射沉积ITO。已知在沉积期间从加热的基板或从热退火提供的热能与沉积参数一样重要,以使高质量c-ITO的生长成为可能。然而,由于低的玻璃化转变温度(T_g),聚合物基材的升高温度受到很大限制。使用高分辨率透射电子显微镜(HR TEM)观察了非晶ITO(a-ITO)中c-ITO的成核和生长模式,并将其与他人报道的在Si或玻璃基板上的成核和生长模式进行了比较。还测量了ITO的薄层电阻(R_s),并研究了与微结构的关系。我们的结果表明,微晶在a-ITO的生长表面上成核并且几乎不间断地生长,成为聚合物基材上ITO中的柱状晶粒。这与在相似沉积条件下与硅或玻璃基板的界面产生的柱状晶粒的随机成核和竞争性生长模式不同。 ITO上由于与基板的物理和化学性质不匹配而导致的ITO晶格畸变在聚合物上比在Si或玻璃上更为严重,这似乎是界面和柱状晶粒之间的ITO大部分仍为非晶态的潜在原因之一。

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