Method for producing crystalline solid solution powder, crystalline solid solution powder of indium-tin-oxide, ITO sputtering target and ITO coating

摘要

In the production of a mixed crystal powder of less than 100 OMEGA .cm resistivity by reacting a molten metal alloy with a gas in a plasma arc, the reacted material is exposed, at the outlet opening of the plasma chamber, to a gas stream which cools the material at 105-108 K/second down to 50-400 degrees C to form a mixed crystal powder. Also claimed is an indium-tin oxide mixed crystal powder which contains 90 vol.% indium-tin oxide mixed crystal phase in an indium oxide crystal lattice and which, when compacted to 35-50% theoretical density, has a resistivity of 0.01-95 OMEGA .cm.