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首页> 外文期刊>Surface & Coatings Technology >Nanocomposite Ti-Si-N, Zr-Si-N, Ti-Al-Si-N, Ti-Al-V-Si-N thin film coatings deposited by vacuum arc deposition
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Nanocomposite Ti-Si-N, Zr-Si-N, Ti-Al-Si-N, Ti-Al-V-Si-N thin film coatings deposited by vacuum arc deposition

机译:通过真空电弧沉积沉积的纳米复合Ti-Si-N,Zr-Si-N,Ti-Al-Si-N,Ti-Al-V-Si-N薄膜涂层

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Thin films of Ti-Si-N, Zr-Si-N, Ti-Al-V-Si-N and Ti-Al-Si-N have been synthesized by reactively evaporating a metal or metal alloy cathode by a vacuum arc in a background of nitrogen gas and tetramethylsilane. The amount of silicon in the films was varied from 0 to 19 at.%. With increasing silicon content, the Ti-Si-N, Ti Al-V-Si-N and Zr-Si-N films were found to increase in hardness, the maximum recorded value being 42 GPa. The Ti-Al-Si-N films showed either a slight increase or decrease in hardness with silicon content. Structural studies showed that the increased hardness was accompanied by a reduction in the grain size, in the case of Ti-Al-V-Si-N, from 24 to 7.7 mn. Transmission electron microscopy (TEM) studies confirmed the X-ray diffraction (XRD) results and showed that the major diffraction lines were associated with the nitride phases. X-ray photoelectron spectroscopy (XPS) studies indicated the presence of Si3N4 and also small amounts of carbide which may be amorphous and possibly located at the grain boundaries. (c) 2004 Elsevier B.V. All rights reserved.
机译:Ti-Si-N,Zr-Si-N,Ti-Al-V-Si-N和Ti-Al-Si-N的薄膜是通过在真空电弧炉中通过真空电弧对金属或金属合金阴极进行反应性蒸发而合成的氮气和四甲基硅烷的背景。薄膜中的硅含量在0至19 at。%之间变化。随着硅含量的增加,发现Ti-Si-N,Ti Al-V-Si-N和Zr-Si-N膜的硬度增加,最大记录值为42 GPa。 Ti-Al-Si-N膜的硬度随硅含量的增加而略有增加或减少。结构研究表明,硬度的提高伴随着晶粒尺寸的减小(对于Ti-Al-V-Si-N而言,从24减小至7.7百万)。透射电子显微镜(TEM)研究证实了X射线衍射(XRD)结果,并显示主要衍射线与氮化物相相关。 X射线光电子能谱(XPS)研究表明存在Si3N4以及少量的碳化物,这些碳化物可能是非晶态的并且可能位于晶界。 (c)2004 Elsevier B.V.保留所有权利。

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