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首页> 外文期刊>The Physics of Metals and Metallography >Processes at the Liquid/Crystal Boundary upon Contact Melting in the System with Intermediate Solid Phases
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Processes at the Liquid/Crystal Boundary upon Contact Melting in the System with Intermediate Solid Phases

机译:中间固相体系中接触熔融后在液/晶边界处的过程

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摘要

Growth of the liquid interlayer in the indium-tin system at 400 K in the process of contact melting in the nonstationary diffusion regime has been investigated experimentally. The contact pairs were composed of pure substances, solid solutions, and intermediate solid phases. The previously developed concepts have been extended to include the case where the existence of intermediate solid phases on both sides of the liquid phase should be taken into account. It follows from the results obtained that the concentration range of the liquid interlayer corresponds to the homogeneity range of the liquid phase in the phase diagram at the temperature of experiments. The results of the experiments can be explained based on the model according to which solid solutions and intermediate solid phases at the liquid/crystal interface arise due to the precipitation from the metastable melt supersaturated by the substance of the adjacent phase.
机译:实验研究了在非稳态扩散条件下,在接触熔化过程中,铟锡体系中的液体中间层在400 K下的生长。接触对由纯物质,固溶体和中间固相组成。先前开发的概念已扩展到包括应考虑液相两侧均存在中间固相的情况。从获得的结果得出,在实验温度下,液体夹层的浓度范围对应于相图中液相的均匀性范围。可以基于该模型来解释实验结果,根据该模型,由于亚稳熔体的沉淀物被相邻相的物质过饱和,因此在液晶/晶体界面处出现固溶体和中间固相。

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