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Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen

机译:含氮的锂掺杂ZnO中浅受体的形成

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We performed first-principle total-energy calculations to investigate the mechanism for the realization of high quality p-type ZnO codoped with lithium and nitrogen. We find that the higher hole concentrations measured in the codoped ZnO is related to decreased ionization energy of acceptors and reduction of compensations. The dual acceptor N_OLi_(Zn) complex proposed in experiments is unstable. While in the (Li_IN _O)Li_(Zn) complex, where acceptor Li_(Zn) binds to the passivated (Li_IN_O) complex is stable and acts as a single acceptor. The activation energy of this complex is about 60 meV lower than that of Li_(Zn) in Li-monodoped ZnO. The formation of inactive (Li_IN_O) complexes creates a fully occupied impurity band just above the valence band maximum of ZnO. Thus Li atoms binding to this complex is activated by the electrons from the complex state rather than from the host states, accounting for decreased activation energy. Besides, Li _I~+ and N_O~- bind tightly through the Coulomb interaction. Such binding will suppress the amount of compensating donor Li_I and limit the compensation for the desired acceptor Li _(Zn).
机译:我们进行了第一性原理总能计算,以研究实现锂和氮共掺杂的高质量p型ZnO的机理。我们发现,在共掺杂的ZnO中测得的更高的空穴浓度与受体电离能的降低和补偿的降低有关。实验中提出的双受体N_OLi_(Zn)络合物是不稳定的。在(Li_IN_O)Li_(Zn)络合物中,受体Li_(Zn)与钝化的(Li_IN_O)络合物结合的位置是稳定的,并且充当单个受体。该配合物的活化能比单钼酸锂中的Li_(Zn)低约60 meV。惰性(Li_IN_O)配合物的形成会在ZnO的价带最大值以上产生一个完全占据的杂质带。因此,与该络合物结合的Li原子被来自络合物态而不是来自主体态的电子活化,这说明活化能降低。此外,Li _I〜+和N_O〜-通过库仑相互作用紧密结合。这种结合将抑制补偿的供体Li_I的量并限制对所需受体Li_(Zn)的补偿。

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