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Two-band nature of upper critical fields in MgB2 thin films investigated by 37T pulsed magnet

机译:37T脉冲磁体研究MgB2薄膜中上临界场的两波段性质

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We present experimental and calculated phase diagrams of the upper critical field H-c2 and the anisotropy parameter gamma of various MgB2 thin films prepared by the molecular beam epitaxy (MBE) and the multipletargets Sputtering system. Experimental data of the H-c2(T) and gamma are analyzed by fitting the Gurevich theory. We obtained the result that for these MgB2 films the H-c2(T) is explained as the case of D-pi/D-sigma > 1, which means the films are classified to the cleaner pi band than the sigma band. We discuss temperature dependence of the transition width obtained from the magnetoresistance measurements. (C) 2008 Elsevier Ltd. All rights reserved.
机译:我们提供了由分子束外延(MBE)和多靶溅射系统制备的各种MgB2薄膜的上临界场H-c2和各向异性参数gamma的实验和计算相图。 H-c2(T)和γ的实验数据通过拟合Gurevich理论进行了分析。我们得到的结果是,对于这些MgB2薄膜,H-c2(T)被解释为D-pi / D-sigma> 1的情况,这意味着这些薄膜被归类为比sigma带更干净的pi带。我们讨论了从磁阻测量获得的过渡宽度的温度依赖性。 (C)2008 Elsevier Ltd.保留所有权利。

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