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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electrophoretic Deposition of Single-Walled Carbon Nanotubes Covalently Modified with Bulky Porphyrins on Nanostructured SnO_2 Electrodes for Photoelectrochemical Devices
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Electrophoretic Deposition of Single-Walled Carbon Nanotubes Covalently Modified with Bulky Porphyrins on Nanostructured SnO_2 Electrodes for Photoelectrochemical Devices

机译:在光电电化学器件的纳米结构SnO_2电极上用大体积卟啉共价修饰的单壁碳纳米管的电泳沉积

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摘要

Single-walled carbon nanotubes (SWNTs) covalently modified with large porphyrin molecules have been prepared to construct photoelectrochemical devices with nanostructured SnO_2 electrodes on which the multiporphyrin-linked SWNTs are deposited electrophoretically. The film of the porphyrin-linked SWNTs on the nanostructured SnO_2 electrode exhibited an incident photon-to-photocurrent efficiency as high as 4.9% under an applied potential of 0.08 V vs SCE. The more uniform film and moderate photocurrent generation in the porphyrin-linked SWNT devices can be rationalized by the exfoliation abilities of the bulky porphyrins that yield large steric hindrance around the SWNTs. Direct electron injection from the excited states of the SWNTs to the conduction band of the SnO_2 electrode is responsible for the photocurrent generation. Despite the efficient quenching of the porphyrin-excited singlet state by the SWNTs in the porphyrin-linked SWNTs, the photocurrent action spectra revealed that the excitation of the porphyrin moieties makes no contribution to the photocurrent generation. The evolution of an exciplex between the porphyrin-excited singlet state and the SWNTs and the subsequent rapid decay to the ground state without generating the charge-separated state is proposed to explain the unusual photoelectrochemical behavior. The results obtained here will provide valuable information on the design of SWNT-based photoelectrochemical devices.
机译:已经准备了用大卟啉分子共价修饰的单壁碳纳米管(SWNT),以构建具有纳米结构的SnO_2电极的光电化学装置,该电极上电泳沉积了多卟啉连接的SWNT。纳米结构的SnO_2电极上的卟啉连接的SWNT薄膜在0.08 V的施加电势下相对于SCE表现出高达4.9%的入射光子-光电流效率。卟啉连接的SWNT装置中更均匀的膜和适度的光电流产生可以通过在SWNT周围产生大的空间位阻的庞大的卟啉的剥离能力来合理化。从SWNT的激发态到SnO_2电极的导带的直接电子注入是光电流产生的原因。尽管通过卟啉连接的SWNT中的SWNT有效地淬灭了卟啉激发的单线态,但是光电流作用谱显示,卟啉部分的激发对光电流的产生没有贡献。提出了卟啉激发的单重态与单壁碳纳米管之间的激基复合物的演化,以及随后的快速衰减至基态而不产生电荷分离态的现象,以解释这种异常的光电化学行为。此处获得的结果将为基于SWNT的光电化学装置的设计提供有价值的信息。

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