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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >A Method for Fabrication of Graphene Oxide Nanoribbons from Graphene Oxide Wrinkles
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A Method for Fabrication of Graphene Oxide Nanoribbons from Graphene Oxide Wrinkles

机译:从氧化石墨烯皱纹制备氧化石墨烯纳米带的方法

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摘要

We report a novel approach for direct fabrication of graphene oxide nanoribbons (GONRs) on the 3-aminopropyltriethoxysilane (APTES)-modified SiOx surface with varied widths and lengths by plasma etching of graphene oxide (GO) wrinkles (GOWs), in which top layers of GOWs are used as sacrificial layers. AEM images show that single- and double-layer GONRs are easily achieved, and also confirm that these GONRs are obtained from GOWs, which normally form during absorption of large GO sheets with a size of at least several micrometers on APTES-modified SiOx substrates. Raman mapping and scanning electron microscopy (SEM) were performed to further confirm the attainment of GONRs by this method. A GONR with a width as narrow as 15 nm was obtained. Reduced graphene oxide nanoribbons (rGONRs) can be readily obtained by chemical reduction of GONRs.
机译:我们报告了一种新方法,可通过等离子刻蚀氧化石墨烯(GO)皱纹(GOWs),在3-氨基丙基三乙氧基硅烷(APTES)改性的SiOx表面上直接制造氧化石墨烯纳米带(GONRs),该表面具有不同的宽度和长度。 GOW用作牺牲层。 AEM图像显示单层和双层GONR很容易实现,并且还证实了这些GONR是从GOW中获得的,这些GOW通常是在APTES改性的SiOx基板上吸收至少几微米大小的大GO片时形成的。进行拉曼作图和扫描电子显微镜(SEM)以进一步证实通过该方法获得GONR。获得了宽度窄至15nm的GONR。还原的氧化石墨烯纳米带(rGONRs)可通过化学还原GONRs轻松获得。

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