首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Growth Mechanism of Graphene on Ru(0001) and O2 Adsorption on the Graphene/ Ru(0001) Surface
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Growth Mechanism of Graphene on Ru(0001) and O2 Adsorption on the Graphene/ Ru(0001) Surface

机译:石墨烯在Ru(0001)上的生长机理以及O2在石墨烯/ Ru(0001)表面的吸附

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摘要

The growth mechanism of monolayer (ML) graphene on Ru(0001) via pyrolysis of C2H4 was studied by scanning tunneling microscopy (STM), high-resolution electron energy loss spectroscopy (HREELS), and ultraviolet photoelectron spectroscopy (UPS). On the basis of the mechanistic understanding, graphene overlayers ranging from nanographene clusters to graphene film with 1 ML coverage were prepared in a well-controlled way. O2 adsorption on the graphene/Ru(0001) surface was investigated by STM, UPS, and X-ray photoelectron spectroscopy (XPS). It is revealed that the Ru(0001) surface fully covered by graphene becomes passivated to O2 adsorption at room temperature and only activated again at elevated temperatures (>500 K). The adsorbed oxygen intercalates between the topmost graphene overlayer and the Ru(0001) substrate surface. These intercalated oxygen atoms decouple the graphene layer from the Ru(0001) substrate, forming quasi-freestanding monolayer graphene atomic crystals floating on the O-Ru(0001) surface.
机译:通过扫描隧道显微镜(STM),高分辨率电子能量损失谱(HREELS)和紫外光电子能谱(UPS)研究了Ru(0001)上C2H4热解对单层(ML)石墨烯的生长机理。基于机理的理解,以良好控制的方式制备了从纳米石墨烯团簇到具有1 ML覆盖率的石墨烯薄膜的石墨烯覆盖层。通过STM,UPS和X射线光电子能谱(XPS)研究了O2在石墨烯/ Ru(0001)表面上的吸附。结果表明,被石墨烯完全覆盖的Ru(0001)表面在室温下被钝化为O2吸附,仅在高温(> 500 K)下才被激活。吸附的氧气插入最顶层的石墨烯覆盖层和Ru(0001)衬底表面之间。这些插入的氧原子将石墨烯层与Ru(0001)衬底解耦,形成漂浮在O-Ru(0001)表面上的准自立式单层石墨烯原子晶体。

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