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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Polyfluorene-Based Push-Pull Type Functional Materials for Write-Once-Read-Many-Times Memory Devices
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Polyfluorene-Based Push-Pull Type Functional Materials for Write-Once-Read-Many-Times Memory Devices

机译:一次写入多次读取存储设备的基于聚芴的推挽型功能材料

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摘要

A highly soluble polyfluorene-based copolymer containing electron-rich triphenylamine (TPA) and electron-poor 9,9-bis(3,4-bis(3,4-dicyanophenoxy)phenyl side chains in the C-9 position of the fluorene unit was synthesized under Yamamoto conditions. By applying 306 nm as excitation wavelength, the resultant polymer exhibits strong photoluminescence with maximum emission peaks centered at 413 and 433(sh) nm in chloroform. The calculated highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), energy bandgap, ionization potential, and electron affinity are -5.66, -3.44,2.22,5.92, and 3.70 eV, respectively. The as-fabricated polymer film exhibited typical stable write-once-read-many-times (WORM) memory characteristics, which are desirable for ultralow-oost permanent storage of digital images. The currents in both ON and OFF states did not show any degradation, suggesting good device stability. The ON/OFF current ratio observed in the sweep /- K characteristics at +1.0 V is 6.1 x 10~3. The conduction mechanism through ITO/polymer/Al device is discussed.
机译:一种高度可溶性的基于聚芴的共聚物,在芴单元的C-9位置包含富电子的三苯胺(TPA)和贫电子的9,9-双(3,4-双(3,4-二氰基苯氧基)苯基)侧链在山本条件下合成得到的聚合物,以306 nm为激发波长,在氯仿中表现出较强的光致发光特性,最大发射峰集中在413和433(sh)nm处;计算得到的最高占据分子轨道(HOMO),最低未占据分子轨道(LUMO),能带隙,电离电势和电子亲和力分别为-5.66,-3.44、2.22、5.92和3.70 eV。制备的聚合物膜表现出典型的稳定的一次写入多次读取次数(WORM) )的存储特性,这对于数字图像的超低价永久性存储是理想的。ON和OFF状态下的电流均未显示任何劣化,表明器件具有良好的稳定性。扫掠/-K特性中观察到的ON / OFF电流比+1.0 V时为6.1 x 10〜3。讨论了通过ITO /聚合物/ Al器件的导电机理。

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