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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Copper(I) tert-butylthiolato clusters as single-source precursors for high-quality chalcocite thin films: Film growth and microstructure control
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Copper(I) tert-butylthiolato clusters as single-source precursors for high-quality chalcocite thin films: Film growth and microstructure control

机译:叔丁基硫代铜(I)铜簇作为高质量菱锰矿薄膜的单源前体:膜生长和微结构控制

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摘要

Soluble cluster compounds of polymeric ((CuSBu)-Bu-t)(infinity) (1), such as the trialkylphosphine adducts [((CuSBu)-Bu-t)(4)(PR3)(2)] (R = Me (2a), Et (2b)) or the mixed ligand cluster Cu-7((SBu)-Bu-t)(4)(hfa)(3)(PMe3)(3) (3, hfa = CH(COCF3)(2)), can be used as single-source precursors for chalcocite (alpha-Cu2S) film growth. Toluene or tetrahydrofuran solutions of 2a, 2b, or 3 afford high-quality chalcocite thin films on glass by aerosol-assisted chemical vapor deposition (AACVD). The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, optical spectroscopy, and Hall effect electrical measurements. Surface morphologies were analyzed by scanning electron microscopy and atomic force microscopy. Phase-pure Cu2S films grown with 2a/b consist of large micrometer-scale plates, which lie flat on the substrate surface, resulting in an extraordinarily strong < 00l > preferential orientation with respect to the hexagonal high-chalcocite substructure. The film morphologies as grown with precursor 3 suggest competing diketonate versus thiolate coordination at the {100} growth sites offering ligand-assisted film microstructural growth control.
机译:聚合((CuSBu)-Bu-t)(无穷大)(1)的可溶性簇化合物,例如三烷基膦加合物[((CuSBu)-Bu-t)(4)(PR3)(2)](R = Me (2a),Et(2b))或混合配体簇Cu-7((SBu)-Bu-t)(4)(hfa)(3)(PMe3)(3)(3,hfa = CH(COCF3) (2))可用作球墨铸铁(α-Cu2S)膜生长的单源前驱体。 2a,2b或3的甲苯或四氢呋喃溶液可通过气溶胶辅助化学气相沉积(AACVD)在玻璃上提供高质量的菱锰矿薄膜。通过X射线衍射,X射线光电子能谱,光学光谱和霍尔效应电学测量来表征膜。通过扫描电子显微镜和原子力显微镜分析表面形态。用2a / b生长的纯相Cu2S薄膜由大的微米级板组成,该板平放在基板表面上,相对于六角形高水辉石亚结构,其超强的<00l>优先取向。与前体3一起生长的薄膜形态表明,在{100}生长位点竞争二酮酸与硫醇酸酯的配位,从而提供配体辅助的薄膜微结构生长控制。

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