首页> 外文期刊>The Journal of Chemical Physics >SPECTROSCOPY, STRUCTURE, ANOMALOUS FLUORESCENCE, AND MOLECULAR QUANTUM BEATS OF SILYLIDENE (H2C=SI), THE SIMPLEST UNSATURATED SILYLENE
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SPECTROSCOPY, STRUCTURE, ANOMALOUS FLUORESCENCE, AND MOLECULAR QUANTUM BEATS OF SILYLIDENE (H2C=SI), THE SIMPLEST UNSATURATED SILYLENE

机译:甲硅烷基(H2C = SI)(最简单的不饱和甲硅烷基)的光谱,结构,异常荧光和分子量子束

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The jet-cooled (B) over tilde B-1(2)-(X) over tilde (1)A(1) spectrum of silylidene, the simplest unsaturated silylene, has been observed for the first time. H2C=Si and D2C=Si have been produced by an electric discharge through tetramethylsilane and tetramethylsilane-d(12) vapor diluted in argon at the exit of a supersonic expansion. Rotational analysis of the 0(0)(0) bands yielded the following substitution structures: r(s) ''(CSi) = 1.706(5) Angstrom, r(s) ''(CH) = 1.099(3) Angstrom, theta(s) ''(HCH)=114.4(2)degrees, r(s)'(CSi) = 1.815(5) Angstrom, r(s)'(CH) = 1.073(4) Angstrom, and theta(s)'(HCH)=133.7(1)degrees. The electronic transition consists primarily of strong electronically allowed perpendicular bands, but a weaker system of vibronically induced parallel bands has also been assigned. Transitions involving Delta upsilon=2 changes in the upsilon(6) (b(2)) mode show up prominently in the spectrum, due to a very large change in the vibrational frequency on excitation. Silylidene has very interesting excited state decay dynamics. Anomalous S-2-S-0 fluorescence is observed due to the very large S-2-S-1 energy gap. Rotational level specific intensity anomalies are found in the laser induced fluorescence spectra. Collision-free fluorescence decay curves exhibit superimposed quantum beats for almost all the accessible rotational levels in the 0(0)(0) bands of H2CSi and D2CSi. Density of states arguments lead to the conclusion that most of the brat patterns are due to coupling with high vibrational levels of the ground state, although two examples of hyperfine splittings associated with singlet-tripler interactions have also been found. (C) 1997 American Institute of Physics. [References: 50]
机译:首次观察到在亚锡(最简单的不饱和亚甲硅烷基)上,在代字波(1)A(1)谱上的代字波B-1(2)-(X)上的喷射冷却(B)。 H2C = Si和D2C = Si是通过在超音速膨胀出口处通过在氩气中稀释的四甲基硅烷和四甲基硅烷-d(12)蒸气放电产生的。对0(0)(0)谱带进行旋转分析得出以下取代结构:r(s)''(CSi)= 1.706(5)埃,r(s)''(CH)= 1.099(3)埃, theta(s)''(HCH)= 114.4(2)度,r(s)'(CSi)= 1.815(5)埃,r(s)'(CH)= 1.073(4)埃,和theta(s )'(HCH)= 133.7(1)度。电子跃迁主要由强电子允许的垂直带组成,但也分配了较弱的由电子感应产生的平行带系统。在upsilon(6)(b(2))模式下,涉及Delta upsilon = 2变化的跃迁在光谱中显着显示,这是由于激发时振动频率的变化非常大。甲硅烷基具有非常有趣的激发态衰减动力学。由于非常大的S-2-S-1能隙,观察到了异常的S-2-S-0荧光。在激光诱导的荧光光谱中发现旋转水平的比强度异常。无碰撞的荧光衰减曲线在H2CSi和D2CSi的0(0)(0)波段中几乎所有可访问的旋转能级都显示出叠加的量子拍。状态密度的论点得出这样的结论:尽管也发现了与单重态-三重相互作用相关的超精细分裂的两个例子,但大多数的小子模式是由于与高振动态的基态耦合所致。 (C)1997美国物理研究所。 [参考:50]

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