首页> 外文期刊>The Journal of Chemical Physics >Energy levels in metal oxide semiconductor quantum dots in water-based colloids
【24h】

Energy levels in metal oxide semiconductor quantum dots in water-based colloids

机译:水性胶体中金属氧化物半导体量子点的能级

获取原文
获取原文并翻译 | 示例
           

摘要

The three-dimensional Schrodinger and Poisson's equations are used to calculate the conduction band profile, energy levels, and Fermi energy of negatively charged semiconductor quantum dots. The calculation is carried out self-consistently within the frame of the finite-difference method. Assuming the effective mass of the proton at the semiconductor-electrolyte interface, we found the conduction band profile for the spherical ZnO quantum dots dispersed as aqueous colloids very similar to the conduction band profile of symmetric modulation-doped semiconductor quantum wells. The energy levels and Fermi energy of the spherical ZnO quantum dots are obtained as a function of the band offset at the semiconductor-electrolyte interface. A comparison of the energy levels for negatively charged and uncharged quantum dots is used as an alternative explanation of the observed reversible blue shift in the absorption spectrum of semiconductor colloids under illumination.
机译:三维Schrodinger和Poisson方程用于计算带负电的半导体量子点的导带分布,能级和费米能。在有限差分法的框架内自洽地进行计算。假设质子在半导体-电解质界面处的有效质量,我们发现分散为水性胶体的球形ZnO量子点的导带谱与对称调制掺杂的半导体量子阱的导带谱非常相似。获得球形ZnO量子点的能级和费米能,它是半导体-电解质界面处带隙的函数。对带负电荷和不带电荷的量子点的能级进行比较,可以作为在照明下观察到的半导体胶体吸收光谱中可逆蓝移的替代解释。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号