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Core ionization energies of carbon-nitrogen molecules and solids

机译:碳氮分子和固体的核心电离能

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Core ionization energies have been calculated for various carbon-nitrogen molecules and solids. The systems investigated contain many of the bonding possibilities which presumably arise in carbon nitride thin films prepared under varying conditions. The molecular core ionization energies are calculated by the #DELTA#SCF self-consistent field method. Several singly, doubly, and triply bonded C_xN_yH_z species have been considered. Core ionization energies of two C_(11)N_4 C sp~2 and C sp~3 solids have been calculated with the full-potential linearized augmented plane wave method. Molecular C 1s binding energies increase with approximately 1 eV for each singly or doubly bonded nitrogen atom attached. The trend is similar in the solids although variations and saturation effects are obtained due to hybridization and nitrogen content. The 1s binding energies of two-coordinated nitrogen atoms in C sp~2 molecules and of pyramidal three-coordinated nitrogen atoms in C sp~3 molecules are close to each other. The differences depend on the size of the systems and the number of CH_3 groups attached. In the solid state compounds, where no CH_3 groups are present, the energies of two-coordinated nitrogen in a C sp~2 environment are always lower than the energy of pyramidal three-coordinated nitrogen in the C sp~3 solid, by more than 1 eV. Concerning the micro structure in thin CN_x films, comparisons of the computational results with experiment indicate that at low nitrogen concentrations the atomic configuration close to the N atoms are mostly of sp~3 character. At higher N contents more two-coordinated nitrogen atoms are incorporated. The N 1s binding energy shifts observed at high substrate temperatures could be explained by either a gradual formation of three-coordinated N atoms in a graphitic-like C sp~2 environment or by local domains containing high N concentrations.
机译:已经为各种碳氮分子和固体计算了核心电离能。研究的系统包含许多可能在不同条件下制备的氮化碳薄膜中出现的键合可能性。分子核电离能通过#DELTA#SCF自洽场法计算。已经考虑了几种单键,双键和三键键合的C_xN_yH_z物种。利用全电位线性化增强平面波方法计算了两个C_(11)N_4 C sp〜2和C sp〜3固体的核电离能。对于每个连接的单键或双键氮原子,分子C 1s的结合能增加约1 eV。尽管由于杂交和氮含量而获得变化和饱和效应,但固体中的趋势相似。 C sp〜2分子中两个配位的氮原子与C sp〜3分子中的金字塔形三配位氮原子的1s结合能彼此接近。差异取决于系统的大小和连接的CH_3组的数量。在不存在CH_3基团的固态化合物中,C sp〜2环境中二配位氮的能量总是比C sp〜3固体中锥体三配位氮的能量低超过1 eV。关于CN_x薄膜的微观结构,计算结果与实验结果的比较表明,在低氮浓度下,接近N原子的原子构型大部分具有sp〜3特征。在较高的N含量下,引入了更多的两个配位的氮原子。在高底物温度下观察到的N 1s结合能移动可以通过在类似石墨的C sp〜2环境中逐渐形成三配位N原子或通过含有高N浓度的局部畴来解释。

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