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EFFECT OF SOLVENT ON SEMICONDUCTOR SURFACE ELECTRONIC STATES - A FIRST-PRINCIPLES STUDY

机译:溶剂对半导体表面电子态的影响-第一性原理研究

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In this paper the first step is taken toward a first-principles molecular theory of the liquid-semiconductor interface. The focus is on the degree of rigor that must be applied to the solvent in order to obtain a realistic description of the interfacial electronic properties. To accomplish this, two different water solvent geometries on the H/Si(111)1X1 surface are assumed, and the electronic structure of the system is calculated using two different models for the water molecules, one which includes the electrons of water explicitly and one which does not. It is found that for a realistic description of the surface electronic structure it is necessary to use an ab initio description of the solvent molecules for at least the first layer due to the electronic state mixing. The issues of broken symmetry of the crystal surface and possible dissociation of the solvent molecules are also discussed. (C) 1995 American Institute of Physics. [References: 38]
机译:在本文中,迈出了迈向液-半导体界面的第一性原理分子理论的第一步。为了获得对界面电子性质的现实描述,重点在于必须对溶剂施加的严格程度。为此,假设H / Si(111)1X1表面上存在两种不同的水溶剂几何形状,并且使用两种不同的水分子模型来计算系统的电子结构,其中一种模型包含水的电子,另一种包含水的电子。哪个没有。发现对于表面电子结构的现实描述,由于电子态混合,至少对于第一层必须使用溶剂分子的从头开始描述。还讨论了晶体表面对称性破坏和溶剂分子可能解离的问题。 (C)1995年美国物理研究所。 [参考:38]

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