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Structural, elastic, electronic, optical and thermal properties of c-SiGe2N4

机译:c-SiGe2N4的结构,弹性,电子,光学和热学性质

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We have investigated the structural, elastic, electronic, optical and thermal properties ofc-SiGe2N4 by using the ultrasoft pseudopotential density functional method within the generalized gra-dient approximation. The calculated structural parameters, including the lattice constant, the internalfree parameter, the bulk modulus and its pressure derivative are in agreement with the available data.The independent elastic constants and their pressure dependence, calculated using the static finite straintechnique, satisfy the requirement of mechanical stability, indicating that c-SiGe2N4 compound could bestable. We derive the shear modulus, Young's modulus, Poisson's ratio and Lame's 'coefficients for idealpolycrystalline c-SiGe2N4 aggregate in the framework of the Voigt-Reuss-Hill approximation. We estimatethe Debye temperature of this compound from the average sound velocity. Band structure, density of states,Mulliken charge populations and pressure coefficients of energy band gaps are investigated. Furthermore, inorder to understand the optical properties of c-SiGe2N4, the dielectric function, refractive index, extinctioncoefficient, optical reflectivity and electron energy loss are calculated for radiation up to 40 eV. Thermaleffects on some macroscopic properties of c-SiGe2N4 are predicted using the quasi-harmonic Debye modelin which the lattice vibrations are taken into account. We have obtained successfully the variations of theprimitive cell volume, volume expansion coefficient, heat capacities and Debye temperature with pressureand temperature in the ranges of 0-40 GPa and 0-2000 K. For the first time, the numerical estimates ofthe elastic constants and related parameters, and the thermal properties are performed for c-SiGe2N4.
机译:我们通过在广义梯度近似中使用超软拟势密度泛函方法研究了c-SiGe2N4的结构,弹性,电子,光学和热学性质。计算得到的结构参数包括晶格常数,内部自由度参数,体积模量及其压力导数与现有数据相吻合。采用静态有限应变技术计算的独立弹性常数及其对压力的依赖性满足机械要求。稳定性,表明c-SiGe2N4化合物可能最佳。我们在Voigt-Reuss-Hill近似的框架中得出了理想多晶c-SiGe2N4聚集体的剪切模量,杨氏模量,泊松比和Lame系数。我们从平均声速估算该化合物的德拜温度。研究了能带隙的能带结构,态密度,Mulliken电荷种群和压力系数。此外,为了理解c-SiGe2N4的光学特性,计算了高达40 eV的辐射的介电函数,折射率,消光系数,光学反射率和电子能量损失。使用准谐波德拜模型预测了c-SiGe2N4的某些宏观性能的热效应,其中考虑了晶格振动。我们成功地获得了原始细胞体积,体积膨胀系数,热容量和德拜温度随压力和温度在0-40 GPa和0-2000 K范围内的变化。首次,弹性常数的数值估计及相关参数,以及对c-SiGe2N4的热性能。

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