Intense field effects on shallow donor impurities in a quantum wire

摘要

Laser dependence of binding energy on exciton in a GaAs quantum well wire embedded on anA1GaAs wire within the single band effective mass approximation is investigated. Laser dressed donorbinding energy is calculated as a function of wire radius with the renormalization of the semiconductorgap and conduction valence effective masses. We take into account the laser dressing effects on both theimpurity Coulomb potential and the confinement potential. The valence-band anisotropy is included inour theoretical model by using different hole masses in different spatial directions. The spatial dielectricfunction and the polaronic effects have been employed in a GaAs/A1GaAs quantum wire. The numericalcalculations reveal that the binding energy is found to increase with decrease with the wire radius, anddecrease with increase with the value of laser field amplitude, the polaronic effect enhances the bindingenergy considerably and the binding energy of the impurity for the narrow well wire is more sensitive tothe laser field amplitude.