The effect of intense laser field on the photoionization cross-section and binding energy of shallow donor impurities in graded quantum-well wire under an electric field

摘要

The laser-field dependence of the impurity binding energy and donor-related photoionization cross-section in graded quantum-well wire under an external static electric field is calculated by a variational method and in the effective mass approximation. We have shown that, in the graded quantum-well wire structures, not only the 'dressed' potential but also the applied direction of the external electric field plays a very important role in the determination of the binding energy.