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首页> 外文期刊>The European physical journal, B. Condensed matter physics >Atomic and electronic structure of single-walled BN nanotubes containing N vacancies as well as C and O substitutes of N atoms
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Atomic and electronic structure of single-walled BN nanotubes containing N vacancies as well as C and O substitutes of N atoms

机译:包含N个空位以及N和C原子取代基的单壁BN纳米管的原子和电子结构

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摘要

Defective single-walled BN nanotubes of armchair- and zigzag-type chiralities with uniform diameter can be simulated using a total geometry optimization for the 1D-periodic model. For calculations, we have applied the formalism of localized Gaussian-type atomic functions using the Hamiltonian containing hybrid (DFT+HF) non-local exchange-correlation functional B3PW as implemented in CRYSTAL code. Single N vacancy as well as C and O substitutes of N atom cause an appearance of the energy levels inside the BN NT band gap accompanied by relaxation of the nearest atomic spheres closest to the point defect and electronic charge redistribution around it.
机译:可以使用一维周期模型的整体几何优化来模拟直径均匀的扶手椅型和之字形手征性的单壁BN纳米管的缺陷。为了进行计算,我们使用了以CRYSTAL代码实现的含哈密顿混合(DFT + HF)非本地交换相关函数B3PW的形式,应用了局部高斯型原子函数的形式。单个N空位以及N原子的C和O替代导致BN NT带隙内出现能级,并伴随着最接近点缺陷的最接近原子球的弛豫和周围电荷的重新分布。

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