The dip effect under integer quantized Hall conditions

摘要

In this work we investigate an unusual transport phenomenon observed in two-dimensional electron gas under integer quantum Hall effect conditions. Our calculations are based on the screening theory, using a semi-analytical model. The transport anomalies are dip and overshoot effects, where the Hall resistance decreases (or increases) unexpectedly at the quantized resistance plateaus intervals.We report on our numerical findings of the dip effect in the Hall resistance, considering GaAs/AlGaAs heterostructures in which we investigated the effect under different experimental conditions.We show that, similar to overshoot, the amplitude of the dip effect is strongly influenced by the edge reconstruction due to electrostatics. It is observed that the steep potential variation close to the physical boundaries of the sample results in narrower incompressible strips, hence, the experimental observation of the dip effect is limited by the properties of these current carrying strips. By performing standard Hall resistance measurements on gate defined narrow samples, we demonstrate that the predictions of the screening theory is in well agreement with our experimental findings.