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Sulphur overlayers on Ir(100) and its effect on the adsorption of CO: A DFT study

机译:硫覆盖物对Ir(100)的影响及其对CO吸附的影响:DFT研究

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摘要

Ordered sulphur overlayers adsorbed on Ir(100) surface are studied with different coverage ranging from 0.11 to 1.0 ML. Calculations indicate that atomic S adsorbs favourably in hollow sites, forming strong covalent bonds with the substrate surface and the adsorption energy is nearly unchanged at lower coverages (θ _S≤ 0.50 ML). In good agreement with experimental observations, the p(2 × 2)-S and c(2 × 2)-S are predicted to be the most stable overlayers. The obtained surface electronic structure modifications induced by sulphur adsorption are coverage-dependent and the results are in accordance with the rectangular band and the Hammer-N?rskov models. Moreover, the effect of sulphur on the adsorption of CO is discussed in the p(2 × 2)-(S + CO) overlayer on Ir(100).
机译:研究了覆盖在Ir(100)表面上的有序硫覆盖层,覆盖范围从0.11到1.0 ML不等。计算表明,原子S在中空部位具有良好的吸附能力,与基材表面形成牢固的共价键,并且在较低的覆盖率下(θ_S≤0.50 ML)吸附能几乎不变。与实验观察结果非常吻合,p(2×2)-S和c(2×2)-S被认为是最稳定的叠加层。硫吸附引起的表面电子结构改性与覆盖率有关,其结果与矩形带和Hammer-N?rskov模型一致。此外,在Ir(100)的p(2×2)-(S + CO)覆盖层中讨论了硫对CO吸附的影响。

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