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Second-Order Perturbational Effect on the Interlayer Interactions in Graphite and Graphite Intercalation Compounds

机译:二阶微扰效应对石墨和石墨插层化合物层间相互作用的影响

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摘要

The role of second-order perturbations in interlayer interactions of two-dimensional electronic systems is examined from simple two-layer models. The preferred nuclear motions are discussed specifically for the preferred stacking of layers in graphite on the basis of transition-density analyses for extended systems. The well-known ABAB stacking of layers in neutral graphite and the AAAA stacking of layers in graphite intercalation compounds (GICs) such as C_6Li and C_8K complexes are proposed to be consequences of orbital interactions (near the Fermi level) between nearest neighbor layers. This paper raises doubts about a widely accepted belief that the interlayer interaction between graphite layers is of the van der Waals type.
机译:从简单的两层模型检查了二维微扰在二维电子系统层间相互作用中的作用。在扩展系统的跃迁密度分析的基础上,针对在石墨中的层的优选堆积专门讨论了优选的核运动。众所周知,中性石墨中的ABAB层堆叠和石墨插层化合物(GIC)(例如C_6Li和C_8K络合物)中的AAAA层堆叠是最邻近层之间轨道相互作用(费米能级附近)的结果。本文引起了人们对石墨层之间的层间相互作用是范德华斯类型的广泛接受观点的怀疑。

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