Power electronics- driving high current 1GBTs in high-power circuits

摘要

It is not difficult to find high power systems using Insulated-gate Bipolar Transistors (IGBTs) switching 500 A with a dc link fo around 1000 V. To illustrte, a few 200 A/1700 V IGBT modules can be connected in parallel (paralleling is easy to perform with homogeneous structure IGBTs) to get currents up to 3000 amps and more. An important normally forgotten point is how to drive these switches with the necessary energy and wave shape to obtain maximum power and minimum losses from these elements. Therefore, an appropriate driver plays an important game if we expect high performance from the whole system.